Author Affiliations
Abstract
1 CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
2 CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
3 Hefei Guizhen Chip Technologies Co., Ltd., Hefei 230000, China
4 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
5 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
6 e-mail: dingyuyang@gz-ichip.com
7 e-mail: weich@ustc.edu.cn
Interferometers are essential elements in classical and quantum optical systems. The strictly required stability when extracting the phase of photons is vulnerable to polarization variation and phase shift induced by environment disturbance. Here, we implement polarization-insensitive interferometers by combining silica planar light-wave circuit chips and Faraday rotator mirrors. Two asymmetric interferometers with temperature controllers are connected in series to evaluate the single-photon interference. Average interference visibility over 12 h is above 99%, and the variations are less than 0.5%, even with active random polarization disturbance. The experiment results verify that the hybrid chip is available for high-demand applications like quantum key distribution and entanglement measurement.
Photonics Research
2021, 9(11): 11002176
1 State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing00083,China
2 State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing00083,China
3 College of Material Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing100049,China
采用InP基衬底设计并制备了1550 nm垂直腔面发射激光器。采用混合镜面布拉格发射镜，其中顶部采用4.5对硅和二氧化硅的介电布拉格反射镜，同时采用隧道结的方式降低p层载流子吸收。制备出阈值电流在20 mA，室温直流下输出光功率为7 μW，激射波长为1554 nm，激射谱半高宽为3 nm的垂直腔面发射激光器。
垂直腔面发射激光器 1550 nm InP基 vertical cavity surface emitting laser （VCSEL） 1550 nm InP-based
1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 00083,China
2 Center of Materials Science and Optoelectronics Engineering，University of Chinese Academy of Sciences, Beijing 100049, China
提出了一种基于平面光波导工艺的带有可调定向耦合器的非对称MZI结构.模拟结果显示，当定向耦合器的两个耦合臂的折射率独立改变时，定向耦合器的调制效果较好；当调制电极与耦合区的波导间距为0时，两个耦合臂的温度差达到最大.测试得到，AMZI的插入损耗为2.05 dB，延迟时间为151.4 ps，脉冲对的功率比近似为1.该器件有助于提高集成QKD器件的性能.
非对称MZI干涉仪 热场模拟 量子密钥分发 asymmetric Mach-Zehnder interferometer thermal field simulation quantum key distribution
1 中国科学院半导体研究所 集成光电子学国家重点联合实验室, 北京 100083
2 中国科学院大学 材料科学与光电技术学院, 北京 100083
设计并制作了硅基二氧化硅波导阵列相控芯片, 该芯片由分束单元、相位调制单元、输出波导阵列三部分构成, 分束单元采用三级1×2的光分束器级联而成, 相位调制单元采用热光调制方式, 输出部分包含8根密集阵列波导.8根波导输出的光在远场发生干涉, 形成扫描光束, 加电后通过二氧化硅热光效应, 折射率变化0.027%(0.000 4)时, 扫描光束偏转5.5°.该波导相控阵列采用2.0%超高折射率差的硅基二氧化硅波导为材料, 经等离子体增强化学气相沉积法进行材料生长及退火, 再经电感耦合等离子体干法刻蚀技术进行刻蚀, 最后切割抛光制作而成.测试结果表明, 静态下该芯片8条输出阵列波导形成清晰干涉光斑, 在电压达到130 V时, 热调制相位后, 光斑移动5.5°.
光子器件 光学相控阵 硅基二氧化硅 热光调制 不等间距波导 Photonic devices Optical phased array Silica on silicon Thermo-optic modulation Unequal spacing waveguide
Author Affiliations
Abstract
1 State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 College of Material Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
A 1 550 nm long-wavelength vertical cavity surface emitting laser (VCSEL) on InP substrate is designed and fabri-cated. The transfer matrix is used to compute reflectivity spectrum of the designed epitaxial layers. The epitaxial layers mainly consist of 40 pairs of n-AlxGayIn(1-x-y)As/InP, and 6 strain compensated AlxGayIn(1-x-y)As/InP quantum wells on n-InP substrate, respectively. The top distributed Bragg reflection (DBR) mirror system has been formed by fabricat-ing 4.5 pairs of SiO2/Si. The designed cavity mode is around 1 536 nm. The dip of the fabricated cavity mode is around 1 530 nm. The threshold current is 30 mA and the maximum output power is around 270 μW under CW opera-tion at room temperature.
光电子快报（英文版）
2018, 14(5): 342
1 中国科学院半导体研究所 集成光电子学国家重点实验室, 北京 100083
2 中国科学院大学 材料科学与光电技术学院, 北京 100049
报道了基于绝缘体上硅材料的25通道、信道间隔200 GHz的阵列波导光栅, 分别优化了输入波导/输出波导/阵列波导间的最小间距 (Δxi/Δxo/d), 及其自由传播区和阵列波导之间边界结构 (W2/L2/L3).实验结果表明, 该阵列波导光栅的插入损耗为5~7 dB, 串扰为13~15 dB, 该阵列波导光栅的性能得到有效提升. 同时也提出了减小插损与串扰的进一步优化方案.
硅基光电子 阵列波导光栅 双刻蚀结构 波分复用/解复用器 silicon photonics arrayed waveguide gratings double-etch structure wavelength division multiplexing/de-multiplexer
Author Affiliations
Abstract
1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China
A 25-channel 200 GHz arrayed waveguide grating (AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the simulation and error analysis of AWG with width fluctuations. The 25-channel 200 GHz AWG exhibits central channel insertion loss of 6.7 dB, crosstalk of ?13 dB, and central wavelength of 1 560.55 nm. The error analysis can explain the experimental results of 25-channel 200 GHz AWG well. By using deep ultraviolet lithography (DUV) and inductively coupled plasma etching (ICP) technologies, the devices are fabricated on silicon- on-insulator (SOI) substrate.
光电子快报（英文版）
2017, 13(4): 241
Author Affiliations
Abstract
1 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,China
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China
A 45-channel 100 GHz arrayed waveguide grating (AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the spectrum simulation. The simulated results show that the central wavelength and channel spacing are 1 562.1 nm and 0.8 nm, respectively, which are in accord with the designed values, and the crosstalk is about ?23 dB. The device is fabricated on silicon-on-insulator (SOI) substrate by deep ultraviolet lithography (DUV) and inductively coupled plasma (ICP) etching technologies. The 45-channel 100 GHz AWG exhibits insertion loss of 6.5 dB and crosstalk of -8 dB.
光电子快报（英文版）
2017, 13(3): 161
1 中国科学院半导体研究所 集成光电子学国家重点联合实验室，北京 100083
2 中国科学院大学 材料科学与光电技术学院，北京 100049
设计并制作了一款应用于IEEE 200/400 GbE标准802.3 bs的阵列波导光栅.该阵列波导光栅使用2.0%的超高折射率差硅基二氧化硅材料，使得芯片尺寸及损耗较小.为了获得平坦化的接收光谱，将输出波导进行展宽，采用多模波导结构，激发若干个高阶模，数个模式叠加使得原本高斯状的光谱顶部产生平坦化，形成箱形接收光谱.设计的阵列波导光栅的中心波长为1 291.10 nm，通道间隔为800 GHz，芯片尺寸为11 mm×4 mm.经过等离子增强化学气相沉积和感应耦合等离子刻蚀工艺制备了芯片，测试结果表明最小的插入损耗为－3.3 dB，相邻通道间串扰小于－20 dB，单通道1 dB带宽在2.12~3.06 nm范围，实现了良好的解复用和平坦化效果，在实际光通信系统中有一定的实用价值.
阵列波导光栅 波分复用 光子器件 平坦光谱响应 光通信 Arrayed waveguide gratings Wavelength division multiplexing Photonic devices Flat spectral response Optical communication
Author Affiliations
Abstract
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
We experimentally demonstrate an efficient enhancement of luminescence from two-dimensional (2D) hexagonal photonic crystal (PC) airbridge double-heterostructure microcavity with Er-doped silicon (Si) as light emitters on siliconon- insulator (SOI) wafer at room temperature. A single sharp resonant peak at 1 529.6 nm dominates the photoluminescence (PL) spectrum with the pumping power of 12.5 mW. The obvious red shift and the degraded quality factor (Q-factor) of resonant peak appear with the pumping power increasing, and the maximum measured Q-factor of 4 905 is achieved at the pumping power of 1.5 mW. The resonant peak is observed to shift depending on the structural parameters of PC, which indicates a possible method to control the wavelength of enhanced luminescence for Si-based light emitters based on PC microcavity.
光电子快报（英文版）
2016, 12(1): 47
